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AM1214-200
RF & MICROWAVE TRANSISTORS L-BAND RADAR APPLICATIONS
.REFRACTORY/ .EMI .LOW .I .OVERLAY .METAL/ .P
DESCRIPTION
PRELIMINARY DATA
G OLD METALLIZATION T TER SITE BALLASTED THERMAL RESISTANCE N PUT/OUTPUT MATCHING GEOMETRY C ERAMIC HERMETIC PACKAGE OUT = 200 W MIN. WITH 7.0 dB GAIN
.400 x .500 2LFL (M205) hermetically sealed ORDER CODE BRANDING 1214-200 AM1214-200
PIN CONNECTION The AM1214-200 device is a high power Class C transistor specifically designed for L-Band Radar pulsed output and driver applications. This device is capable of operation over a wide range of pulse widths, duty cycles and temperatures, and wiil tolerate severe mismatch and overdrive conditions. Low RF thermal resistance and computerized automatic wire bonding techniques ensure high reliability and product consistency. AM1214-200 is supplied in the BIGPACTM hermetic metal/ceramic package with internal input/output matching structures. ABSOLUTE MAXIMUM RATINGS (T case = 25 C)
Symbol Parameter Value Unit 1. Collector 2. Base 3. Emitter 4. Base
PDISS IC VCC TJ T STG
Power Dissipation* Device Current*
(TC 100C)
575 16 40 250 - 65 to +200
W A V C C
Collector-Supply Voltage* Junction Temperature (Pulsed RF Operation) Storage Temperature
THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance* 0.26 C/W
*Applies only to rated RF amplifier operation
September 1992
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AM1214-200
ELECTRICAL SPECIFICATIONS (T case = 25 C) STATIC
Symbol Test Conditions Value Min. Typ. Max. Unit
BVCBO BVEBO BVCES ICES hFE DYNAMIC
Symbol
IC = 50mA IE = 30mA IC = 50mA VBE = 0V VCE = 5V
IE = 0mA IC = 0mA VBE = 0V VCE = 40V IC = 500mA
70 3.0 70 -- 10
-- -- -- -- --
-- -- -- 30 --
V V V mA --
Test Conditions
Value Min. Typ. Max.
Unit
POUT c GP
Note:
f = 1215 -- 1400MHz f = 1215 -- 1400MHz f = 1215 -- 1400MHz = =
150 Sec 5%
PIN = 40W PIN = 40W PIN = 40W
VCC = 40V VCC = 40V VCC = 40V
200 45 7.0
-- -- --
-- -- --
W % dB
Pulse W idth Duty Cycle
TYPICAL PERFORMANCE POWER OUTPUT & COLLECTOR EFFICIENCY vs FREQUENCY
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AM1214-200
IMPEDANCE DATA TYPICAL INPUT IMPEDANCE Z IN ZIN H TYPICAL COLLECTOR LOAD IMPEDANCE ZCL H ZCL L
L
FREQ. L = 1215 MHz M = 1300 MHz H = 1400 MHz
ZIN () 2.7 + j 7.0 3.0 + j 4.8 1.8 + j 1.7
ZCL () 1.7 - j 4.0 1.4 - j 4.0 1.0 - j 2.0 PIN = 40W VCC = 40V Normalized to 50 ohms
TEST CIRCUIT
All dimensions are in millimeters. Substrate 0.025" Thick AL203 (Er = 9.8) C1,C2: C3 : C4 : C5 : 0.6 - 4.5 pF Johanson 7475 Variable Capacitor 100 pF Case B Chip Capacitor 100 F, 63V Electrolytic Capacitor 68 pF Case B Chip Capacitor C6 C7 C8 L1 L2 : : : : : 620 pF Case B Chip Capacitor 0.1 F Ceramic Capacitor Feedthru bypass 1200 pF .018" OD Wire - Placement is Critical 4 Turn .018" OD Inductor
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AM1214-200
PACKAGE MECHANICAL DATA
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use ascritical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. (c) 1994 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A
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